Paper
12 April 2013 Mix-and-match overlay performance of the NSR-S622D immersion scanner
Katsushi Makino, Takahisa Kikuchi, Satoru Sasamoto, Park Hongki, Akiko Mori, Nobuyuki Takahashi, Shinji Wakamoto
Author Affiliations +
Abstract
Current technology nodes, as well as subsequent generations necessitate ongoing improvements to the mix-and-match overlay (MMO) capabilities of lithography scanners. This work will introduce newly developed scanner solutions to address this requirement, and performance data from the latest generation immersion scanner, the NSR-S622D, will be introduced. Enhanced MMO accuracy is imperative for the 22 nm half-pitch and future technology nodes. In order for the matched overlay accuracy to approach single machine overlay (SMO) capabilities, MMO errors must be reduced further. The dominant MMO error sources can be divided into three main areas: SMO, lens distortion matching and wafer grid matching. Nikon continues to decrease these matching error contributors over time, and the latest generation NSRS622D immersion scanner provides a number of innovative solutions to satisfy the most demanding overlay matching requirements ; as a result MMO performance within 3nm is achieved on S622D. Moreover, overlay master system is developed for further product overlay accuracy and stability improvement.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsushi Makino, Takahisa Kikuchi, Satoru Sasamoto, Park Hongki, Akiko Mori, Nobuyuki Takahashi, and Shinji Wakamoto "Mix-and-match overlay performance of the NSR-S622D immersion scanner", Proc. SPIE 8683, Optical Microlithography XXVI, 86830Q (12 April 2013); https://doi.org/10.1117/12.2010875
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Distortion

Semiconducting wafers

Reticles

Source mask optimization

Overlay metrology

Scanners

Metrology

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