Low-resistance Ge/Au/Ni/Ti/Au-based ohmic contact to n-GaAs

V. Kagadei; E. Erofeev

doi:10.1117/12.853581

26 February 2010 Low-resistance Ge/Au/Ni/Ti/Au-based ohmic contact to n-GaAs

V. Kagadei, E. Erofeev

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210I (2010) https://doi.org/10.1117/12.853581
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

The work investigates the influence of the mode and conditions for deposition of a Ti thin film on the specific contact resistance and thermal stability of Ge/Au/Ni/Ti/Au based ohmic contacts to n-GaAs. Deposition techniques of a Ti diffusion barrier were discovered in which a fifty-fold reduction in specific contact resistance was observed, and also an increase in the thermal stability of the surface morphology on the edge of the contact areas. The factors influencing the specific contact resistance are: the angle at which the titanium atoms impact on the GaAs surface, the rate of deposition of the Ti film, and also the residual pressure during deposition. The factor which has an influence on the thermal stability of the morphology of the contact edges appears to be the angle of incidence of the Ti atoms.

Citation Download Citation

V. Kagadei and E. Erofeev "Low-resistance Ge/Au/Ni/Ti/Au-based ohmic contact to n-GaAs", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210I (26 February 2010); https://doi.org/10.1117/12.853581

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