High Temperature Stable Metal Contacts On GaAs Based On WSi2 As Diffusion Barrier, Characterized By XPS And Electrical Measurements

Joachim Wiirfl; Ram P. Gupta; Hans L. Hartnagel

doi:10.1117/12.941046

22 April 1987 High Temperature Stable Metal Contacts On GaAs Based On WSi2 As Diffusion Barrier, Characterized By XPS And Electrical Measurements

Joachim Wiirfl, Ram P. Gupta, Hans L. Hartnagel

Author Affiliations +

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941046
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

A systematic investigation of high temperature stable metal contacts on GaAs using WSi2 as a diffusion barrier between the Ge and the Au metallization of a GaAs-Ge-WSi2-Au contact is presented. The effects of temperature stressing up to 610°C regarding the contact composition were characterized by XPS sputter profil-ing techniques and supported by electrical measurements of the contact parameters. It is shown that the con-tact system remains stable for long-term operation conditions at 350°C (e.g. 2oo hours). At much higher temperatures (610°C) interdiffusion between WSi2-Au and WSi2-Ge together with an additional diffusion of Ga into the metallization constitutes the lifetime limiting mechanism of such contacts.

Citation Download Citation

Joachim Wiirfl, Ram P. Gupta, and Hans L. Hartnagel "High Temperature Stable Metal Contacts On GaAs Based On WSi2 As Diffusion Barrier, Characterized By XPS And Electrical Measurements", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941046

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