Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe

T. D. Aliyeva; G. D. Abdinova; N. M. Akhundova; B. Sh. Barkhalov

doi:10.1117/12.742599

26 April 2007 Electrical properties of the metal-semiconductor structures on the basis of Pb_1-xMn_xTe

T. D. Aliyeva, G. D. Abdinova, N. M. Akhundova, B. Sh. Barkhalov

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663610 (2007) https://doi.org/10.1117/12.742599
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

The effect of an annealing at 100-110 °C on contact resistance (r_k) and adhesive strength of the contacts to Pb_1-xMn_xTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on r_k is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag₂Te.

Citation Download Citation

T. D. Aliyeva, G. D. Abdinova, N. M. Akhundova, and B. Sh. Barkhalov "Electrical properties of the metal-semiconductor structures on the basis of Pb_1-xMn_xTe", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663610 (26 April 2007); https://doi.org/10.1117/12.742599

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