KrF resists and process for implant layers at advanced nodes

Hung-Chin Huang; Yong-Fa Huang; Steven Wu; Louis Jang; Sho-Shen Lee; George K. C. Huang; Howard Chen; Chun-Chi Yu; Tomoki Kurihara; Hitoshi Fukiya; Hiromu Yoshida; Yoshihiro Yamamoto

doi:10.1117/12.816136

1 April 2009 KrF resists and process for implant layers at advanced nodes

Hung-Chin Huang, Yong-Fa Huang, Steven Wu, Louis Jang, Sho-Shen Lee, George K. C. Huang, Howard Chen, Chun-Chi Yu, Tomoki Kurihara, Hitoshi Fukiya, Hiromu Yoshida, Yoshihiro Yamamoto

Author Affiliations +

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72730M (2009) https://doi.org/10.1117/12.816136
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The minimum design rule of device patterns for LSI implant layers has been shrinking constantly according to the industry requirements. Wavelength has been shortened and numerical aperture (NA) of the scanner has been enlarged to catch up with the required shrinkage. Implant layers are unique because the resist is nearly always used without an antireflective coating, and as a result, the resist is in direct contact with a multitude of substrate materials. In implant applications, the wafer topography sacrifices some of the lithographic performance in order to obtain adequate features on both top and bottom of the topography. KrF lithography has applied to most of the ion implant levels at today's advanced nodes. To solve the several issues in ion implant process, New KrF resist was designed specifically for the lithographic / implantation process requirements.

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Hung-Chin Huang, Yong-Fa Huang, Steven Wu, Louis Jang, Sho-Shen Lee, George K. C. Huang, Howard Chen, Chun-Chi Yu, Tomoki Kurihara, Hitoshi Fukiya, Hiromu Yoshida, and Yoshihiro Yamamoto "KrF resists and process for implant layers at advanced nodes", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730M (1 April 2009); https://doi.org/10.1117/12.816136

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