Formation mechanism of 193nm immersion defects and defect reduction strategies

Yayi Wei; Stefan Brandl; Frank Goodwin

doi:10.1117/12.771221

26 March 2008 Formation mechanism of 193nm immersion defects and defect reduction strategies

Yayi Wei, Stefan Brandl, Frank Goodwin

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69231Y (2008) https://doi.org/10.1117/12.771221
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

The formation mechanism of various 193nm immersion-related defects is investigated. The experimental results are reviewed and compared to the simulation results, which enables us to form a clear picture of how the immersion defects are generated. Based on the understanding of defects mechanisms, a series of the defect reduction measures is proposed for the 193nm immersion process.

Citation Download Citation

Yayi Wei, Stefan Brandl, and Frank Goodwin "Formation mechanism of 193nm immersion defects and defect reduction strategies", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231Y (26 March 2008); https://doi.org/10.1117/12.771221

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