Enhanced numerical analysis of three-color HgCdTe detectors

K. Jóźwikowski; A. Rogalski

doi:10.1117/12.723355

14 May 2007 Enhanced numerical analysis of three-color HgCdTe detectors

K. Jóźwikowski, A. Rogalski

Proceedings Volume 6542, Infrared Technology and Applications XXXIII; 654211 (2007) https://doi.org/10.1117/12.723355
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States

Abstract

The performance of three-color HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with two-color detectors with two back-to-back junctions, three-color structure contain an absorber of intermediate wavelength placed between two junctions, and electronic barriers are used to isolate this intermediate region. This structure was first proposed by British workers. Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well as interference effects in heterostructure with metallic electrical contacts. Three detector structures with different localizations of separating barriers are analyzed. The calculations results are presented in the form of spatial distributions of bandgap energy and quantum efficiency. It is shown that the performance of the detector is critically dependent on the barrier's doping level and position in relation to the junction. This behavior is serious disadvantage of the considered three color detector. A small shift of the barrier location and doping level causes serious changes in spectral responsivity.

Citation Download Citation

K. Jóźwikowski and A. Rogalski "Enhanced numerical analysis of three-color HgCdTe detectors", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654211 (14 May 2007); https://doi.org/10.1117/12.723355

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