Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

Jakub Wenus; Jaroslaw Rutkowski; Antoni Rogalski

doi:10.1117/12.429419

12 June 2001 Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

Jakub Wenus, Jaroslaw Rutkowski, Antoni Rogalski

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429419
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

In the paper the performance of P-on-n double-layer heterojunction HgCdTe photodiodes are temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and R₀A product is analyzed. The effect of lateral collection of diffusion current and photocurrent on photodiode parameters is also shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p- side doping concentration on photodiode parameters is described briefly.

Citation Download Citation

Jakub Wenus, Jaroslaw Rutkowski, and Antoni Rogalski "Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429419

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