Modeling of LWIR nBn HgCdTe photodetector

Z. H. Ye; Y. Y. Chen; P. Zhang; C. Lin; X. N. Hu; R. J. Ding; L. He

doi:10.1117/12.2053288

24 June 2014 Modeling of LWIR nBn HgCdTe photodetector

Z. H. Ye, Y. Y. Chen, P. Zhang, C. Lin, X. N. Hu, R. J. Ding, L. He

Proceedings Volume 9070, Infrared Technology and Applications XL; 90701L (2014) https://doi.org/10.1117/12.2053288
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

The nBn structure with an electron barrier sandwiched by n-type cap and absorber layers was predicted to suppress the Shockley-Read-Hall (SRH) generation-recombination processes and surface leakage. The MCT nBn structure has been studied by several groups to implement high operating temperature (HOT) device. In this report, the numerical analysis of the Hg_1-xCd_xTe nBn device in LWIR region (x=0.225) is performed utilizing Crosslight APSYS. The detector performance characterized by dark current, photo-current and detectivity is optimized by adjusting structural parameters such as Cd component and doping of each layer under various biases. Among the parameters, the trade-off between ΔEc and ΔEv is most intensively affected by Cd component of the barrier which was modified carefully and accomplished firstly. Furthermore, the effect of the trap density and trap energy level on the device performance is also investigated especially according to the processing techniques. At 110K, the optimized detectivity of the LWIR MCT nBn device reaches 7.5×10¹⁰ cmHz^1/2/W in this report, comparable with that of the DLPH device (7.6×10¹⁰ cmHz^1/2/W). The novel nBn HgCdTe structure is potentially valuable in LWIR region since the controllable p-doping issue is circumvented and passivation process is simplified.

Citation Download Citation

Z. H. Ye, Y. Y. Chen, P. Zhang, C. Lin, X. N. Hu, R. J. Ding, and L. He "Modeling of LWIR nBn HgCdTe photodetector", Proc. SPIE 9070, Infrared Technology and Applications XL, 90701L (24 June 2014); https://doi.org/10.1117/12.2053288

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