Development of EUV resists in supercritical CO<sub>2</sub> solutions using CO<sub>2</sub> compatible salts (CCS)

Mark Wagner; James De Young; Chris Harbinson

doi:10.1117/12.655880

11 April 2006 Development of EUV resists in supercritical CO₂ solutions using CO₂ compatible salts (CCS)

Mark Wagner, James De Young, Chris Harbinson

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61531I (2006) https://doi.org/10.1117/12.655880
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Pattern collapse and line width roughness (LWR) are two issues expected to become increasingly important as feature sizes approach those expected from EUV lithography. The unique physical properties of supercritical CO₂ (low viscosity, zero surface tension) may provide attractive solutions to these problems, but only if the limitations of CO₂ (low polarity, low pH) can be overcome to give high contrast development of standard resists. This paper describes the use of novel CO₂ compatible salts (CCS) in homogenous supercritical CO₂ solutions to give highly effective reverse image development of a standard EUV resist. Results from a factorial DOE verify the robustness of this new process and indicate that temperature is the most important factor in determining development rate. The absence of surface tension in the homogenous CO₂ solutions used for this development lead to substantially reduced pattern collapse and standing dense L/S features with aspect ratios >12. Development using CCS chemistry in CO₂ is an anisotropic process, where CD of developed features can be controlled without affecting the resist film height. Plasticization of the amorphous resist polymer by CO₂ during development contributes to the ~30% reduction in LWR for CCS samples versus standard TMAH development. The feasibility of scaling up CCS based development in CO₂ from the small scale view cell into a 200 mm full wafer prototype tool has been demonstrated. A two-step process for resist development is proposed, along with a likely mechanism to account for the high level of contrast observed.

Citation Download Citation

Mark Wagner, James De Young, and Chris Harbinson "Development of EUV resists in supercritical CO₂ solutions using CO₂ compatible salts (CCS)", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61531I (11 April 2006); https://doi.org/10.1117/12.655880

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