Advanced mask cleaning techniques for sub-100-nm technology nodes

James S. Papanu; Roman Gouk; Cole Franklin; Han-Wen Chen; Steven Verhaverbeke; Alexander Ko; Kent Child; Pieter Boelen; Suresh Shrauti; Elias Martinez; Brian J. Brown

doi:10.1117/12.632294

4 November 2005 Advanced mask cleaning techniques for sub-100-nm technology nodes

James S. Papanu, Roman Gouk, Cole Franklin, Han-Wen Chen, Steven Verhaverbeke, Alexander Ko, Kent Child, Pieter Boelen, Suresh Shrauti, Elias Martinez, Brian J. Brown

Author Affiliations +

Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59921G (2005) https://doi.org/10.1117/12.632294
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

Sub-pellicle defects and haze increase due to photon reaction with cleaning chemistry residues are especially problematic on photomasks for 193 nm and shorter exposure wavelengths. In addition to mask cleaning, these chemistries are also used for photoresist stripping from photomasks. In this paper sulfuric acid free processes are shown to be effective for mask cleaning and photoresist removal. Bulk removal of photoresist was accomplished with both oxygen based dry plasma stripping and with wet oxidizing chemistry. Surface preparation prior to the main cleaning step was necessary to render Cr surface hydrophilic and enable targeted cleaning performance. This was accomplished with an O₃/DI pre-treatment step. Full mask megasonics improved particle removal efficiency of moderately to heavily contaminated masks.

Citation Download Citation

James S. Papanu, Roman Gouk, Cole Franklin, Han-Wen Chen, Steven Verhaverbeke, Alexander Ko, Kent Child, Pieter Boelen, Suresh Shrauti, Elias Martinez, and Brian J. Brown "Advanced mask cleaning techniques for sub-100-nm technology nodes", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921G (4 November 2005); https://doi.org/10.1117/12.632294

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