Self-aligned resist patterning with 172nm and 193nm backside flood exposure on attenuated phase shift masks

Jun Chun; Taejoong Ha; Hoyong Jung; Sangjin Jo; Oscar Han

doi:10.1117/12.746638

1 November 2007 Self-aligned resist patterning with 172nm and 193nm backside flood exposure on attenuated phase shift masks

Jun Chun, Taejoong Ha, Hoyong Jung, Sangjin Jo, Oscar Han

Author Affiliations +

Proceedings Volume 6730, Photomask Technology 2007; 673044 (2007) https://doi.org/10.1117/12.746638
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

We have investigated self-aligned resist patterning for a patterning accuracy of photo mask. Self-aligned resist pattern can be formed by backside flood exposure on photo-mask. It had been already proved by the experiments with 248 nm light source exposure on binary (Cr on Quartz) and KrF attenuated phase shift masks. Attenuated phase shift masks are generally composed of Cr/MoSiN/Quartz, MoSiN/Quartz, and Quartz layers. MoSiN layers of attenuated phase shift mask have the optical property of 6% transmittance at 248 nm light source, and the interference of the 6%- transmitted light makes the undesirable resist pattern profile on MoSiN-Quartz boundary. This paper shows the fresh possibility of the self-aligned resist pattern fabrication on attenuated phase shift masks using backside flood exposure. To solve the optical property of MoSiN layer, self-aligned resist patterns of KrF attenuated phase shift mask was fabricated using 193 nm wavelength backside flood exposure and ArF attenuated phase shift mask used 172 nm wavelength. The shorter wavelength than generally applied wavelength could minimize transmittance on MoSiN area. Besides we used Negative PR to make the self-aligned resist pattern on exposed regions. These experimental concepts help to form the selective PR patterning on only quartz regions of attenuated phase shift mask.

Citation Download Citation

Jun Chun, Taejoong Ha, Hoyong Jung, Sangjin Jo, and Oscar Han "Self-aligned resist patterning with 172nm and 193nm backside flood exposure on attenuated phase shift masks", Proc. SPIE 6730, Photomask Technology 2007, 673044 (1 November 2007); https://doi.org/10.1117/12.746638

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Light sources

Quartz

Floods

Optical lithography

Phase shifts

Photoresist processing

Photomasks

Show All Keywords

Keywords/Phrases

Search In:

Publication Years