Real-time control of photoresist thickness uniformity during the bake process

Lay Lay Lee-Aquila; Charles D. Schaper; Weng Khuen Ho

doi:10.1117/12.410103

23 August 2000 Real-time control of photoresist thickness uniformity during the bake process

Lay Lay Lee-Aquila, Charles D. Schaper, Weng Khuen Ho

Proceedings Volume 4182, Process Control and Diagnostics; (2000) https://doi.org/10.1117/12.410103
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

As the line-width goes sub-100 nm, process windows for al lithographic processes become smaller. Process control and monitoring of the process parameters become increasingly important and necessary as small variation in process variables such as exposure dose, temperature, resist thickness, developer concentration, etc. may cause the final critical dimension to differ from the specification.

Citation Download Citation

Lay Lay Lee-Aquila, Charles D. Schaper, and Weng Khuen Ho "Real-time control of photoresist thickness uniformity during the bake process", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); https://doi.org/10.1117/12.410103

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