Multivariate analysis of a 100-nm process measured by in-line scatterometry

Sebastien Egret; Tetsunari Furusho; Bart Baudemprez

doi:10.1117/12.535455

24 May 2004 Multivariate analysis of a 100-nm process measured by in-line scatterometry

Sebastien Egret, Tetsunari Furusho, Bart Baudemprez

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.535455
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

In addition to being more accurate and non-destructive compared to CD-SEM metrology, scatterometry provides more information that is usable for Advanced Process Control (APC). The integrated Optical Digital Profilometry (iODP) scatterometry tool included in the TEL Clean Track product line is designed to give not only a quick in-line pattern characterization but also to allow possible identification and correction of the parameters responsible for the process variation. In the case of a trapezoidal approximation of the resist profile, three partially independent responses such as top CD, sidewall angle and height of the pattern are available. If the process drifts, it is likely that the pattern shape will behave differently depending on the parameter responsible for the variation. A design of experiment was run on a 100nm process with different resist softbake (PAB), exposure, focus and post-exposure bake (PEB) conditions. The data measured by iODP was then analyzed using a multivariate technique. A Projection to Latent Structures (PLS) model was built between the processing conditions and the profile measurement enabling the separation of three groups of profile variation. Additional experiments have shown that variations of bottom antireflective thickness can be separated from the other process parameters.

Citation Download Citation

Sebastien Egret, Tetsunari Furusho, and Bart Baudemprez "Multivariate analysis of a 100-nm process measured by in-line scatterometry", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.535455

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