Dual-band infrared detectors

Antoni Rogalski

doi:10.1117/12.382128

13 April 2000 Dual-band infrared detectors

Antoni Rogalski

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382128
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

As the IR technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. Both HgCdTe detectors and quantum well GaAs/AlGaAs photodetectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolor capability in these regions. The main challenges facing all multicolor capability in these regions. The main challenges facing all multicolor devices are more complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger an pixel size gets smaller. In the paper recent progress in development of two-color HgCdTe photodiodes and quantum well IR photodetectors is presented.

Citation Download Citation

Antoni Rogalski "Dual-band infrared detectors", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382128

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