Paper
28 November 2000 Dual-band infrared focal plane arrays
Author Affiliations +
Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407710
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
As the infrared technology continues to advance, there is a growing demand for multispectral detectors and quantum well GaAs/AlGaAs photodetectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolor capability in these regions. The main challenges facing all multicolor devices are more complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets smaller. In the paper recent progress in development of two-color HgCdTe photodiodes and quantum well infrared photodetectors is presented.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antoni Rogalski "Dual-band infrared focal plane arrays", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407710
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Quantum well infrared photodetectors

Mercury cadmium telluride

Photodiodes

Quantum efficiency

Staring arrays

Long wavelength infrared

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