Paper
10 December 1992 Assessment of HgCdTe and GaAs/GaAlAs technologies for LWIR infrared imagers
Roger E. DeWames, Jose M. Arias, Lester J. Kozlowski, G. M. Williams
Author Affiliations +
Abstract
Imagery of long wavelength infrared HgCdTe and GaAs quantum well staring arrays in size 128 X 128 has been demonstrated. In this paper, we compare detector array performance characteristics, discuss the natural and technological limitations of both technologies and identify the improvements likely to be made in the near future. At this stage of feasibility demonstration in the spectral band 8 - 10 micrometers , the effective quantum efficiency in GaAs FPAs is 4% compared to 60% for HgCdTe and the responsivity is 0.08 A/W compared to 4.5 A/W. This value of 0.08 A/W is significantly below the value 2 A/W reported for single quantum well infrared photodetectors (QWIP) detectors. The peak detectivities and NE(Delta) T at 78 K are (5 X 109 cm (root)Hz/W, 0.037 K) and (2 X 1011, 0.005 K) for QWIP and HgCdTe, respectively. The residual nonuniformities after two-point correction are < 0.01% for QWIP arrays and 0.012% for HgCdTe. Crosstalk is currently unsatisfactory in QWIP detector arrays, but design concepts can be used to reduce this effect. For terrestrial imaging, GaAs quantum well detector arrays most likely will need to operate at temperatures below 80 K from fundamental considerations; HgCdTe detector arrays are background limited at operating temperatures <EQ 90 K. Since cooling can drive cost and reliability, and since significant progress has been made in producing high quality HgCdTe detector arrays with good yield, it is unlikely that HgCdTe will be displaced by this technology for terrestrial applications. For low background space applications at (phi) b <EQ 1012 ph/cm2-sec, QWIP detectors at 40 K are background limited. This observation plus their radiation hard characteristics suggest a possible niche in strategic applications.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roger E. DeWames, Jose M. Arias, Lester J. Kozlowski, and G. M. Williams "Assessment of HgCdTe and GaAs/GaAlAs technologies for LWIR infrared imagers", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.142561
Lens.org Logo
CITATIONS
Cited by 18 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mercury cadmium telluride

Quantum well infrared photodetectors

Sensors

Detector arrays

Long wavelength infrared

Staring arrays

Gallium arsenide

RELATED CONTENT

Multicolor focal plane array detector technology: a review
Proceedings of SPIE (November 10 2003)
LWIR multispectral quantum well infrared photodetectors
Proceedings of SPIE (October 10 2003)
New advanced two color (MW LW) infrared detector and focal...
Proceedings of SPIE (November 12 2001)
Technology of multiple quantum well infrared detectors
Proceedings of SPIE (August 13 1997)
Multiband infrared detectors based on III-V materials
Proceedings of SPIE (November 04 2004)
III-V infrared research at the Jet Propulsion Laboratory
Proceedings of SPIE (August 27 2009)
Dual-band infrared detectors
Proceedings of SPIE (April 13 2000)

Back to Top