Arc-induced gate oxide breakdown in plasma etching process

Jungwoo Song; Heegee Lee; Jung Hoon Lee

doi:10.1117/12.284697

11 September 1997 Arc-induced gate oxide breakdown in plasma etching process

Jungwoo Song, Heegee Lee, Jung Hoon Lee

Proceedings Volume 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III; (1997) https://doi.org/10.1117/12.284697
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Arc induced gate oxide breakdown in a plasma etching process was observed and its mechanism was analyzed in this paper. The gate oxide was broken during the poly4 etching process and the poly4 layer is O.8um high from the gate(polyl) layer. Since the broken gate oxide points were found scattered surrounding the arc occurrence point, it is assumed that excessively high electric field be generated near arc occurrence point, making the gate oxide broken. Generally, pattern deterioration by heavy ion bombardment has been observed around the arc point and believed to be the cause of low yields when arc phenomena occurs in the plasma etching process. It is found that any arc occurrence could cause dies to fail by breaking the gate oxide, even if the deteriorated pattern is not concerned with the active die circuits.

Citation Download Citation

Jungwoo Song, Heegee Lee, and Jung Hoon Lee "Arc-induced gate oxide breakdown in plasma etching process", Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); https://doi.org/10.1117/12.284697

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