Variable energy neutral beam design and kinetic energy etching

Lee Chen

doi:10.1117/12.167334

15 February 1994 Variable energy neutral beam design and kinetic energy etching

Lee Chen

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167334
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

A simple flange-mounted neutral beam source is invented to produce a low energy nonthermalized fast neutral radical beam. This variable energy neutral radical beam can activate the SiO₂ or Si surface for chemical reaction depending on the set incident energy and the chemical system chosen. The fast neutral radical beam energy is continuously adjustable (2 eV < Ek < 200 eV). The beam flux is typically 5 X 10¹⁵ cm^-2 sec^-1 (approximately 4 L) and higher beam flux (e.g., approximately 50 L) can be obtained by varying the plasma and the neutralizer parameters. An uniform large diameter plasma is also made for the production of neutral beam covering 5' wafer and larger. Large diameter neutral beam single wafer reactor is feasible with off-the-shelf pumping technology.

Citation Download Citation

Lee Chen "Variable energy neutral beam design and kinetic energy etching", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167334

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