Tunable AR for DUV lithography

Edward K. Pavelchek; Manuel doCanto

doi:10.1117/12.275893

7 July 1997 Tunable AR for DUV lithography

Edward K. Pavelchek, Manuel doCanto

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275893
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

A thermally cross-linking bottom anti-reflectant, AR2, is evaluated. The material can be made in a range of absorptivities. An optimum optical density of about 9/(mu) ( 248 nm) which lowers photoresist swing curves to less than 2%, was chosen from optical modeling and etch rate measurements. The material offers spin bowl compatibility with common spin- coating solvents, and etch rates and conformality improvements over commercially available materials. Good profiles were obtained for several photoresists, and wider process windows than on planar silicon.

Citation Download Citation

Edward K. Pavelchek and Manuel doCanto "Tunable AR for DUV lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275893

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