Paper
9 June 1995 Series of AZ-compatible negative photoresists
Anya Voigt, Gabi Gruetzner, E. Sauer, S. Helm, T. Harder, Simone Fehlberg, Juergen Bendig
Author Affiliations +
Abstract
A series of AZ-compatible negative photoresists composed of a novolak resin and azide sensitizers for the micro and nano-lithography is presented. The ma-N 2400 and ma-N 300 are sensitive to light of the deep UV region (248 nm, 254 nm, 308 nm), the ma-N 400 and ma-N 1400 are sensitive to light of the mid UV region, the latter has a high sensitivity to the i-line (365 nm). The thickness of the resist layers prepared by spin coating is up to 8 micrometers depending on the composition of the resist solution. All resists are non-swelling during aqueous alkaline development after exposure. Using special lithography, these photoresists have a resolution capability up to 0.1 micrometers . The resistance to wet etch solutions and to dry etch gases is superior and higher than that of the most positive resists based on novolak.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anya Voigt, Gabi Gruetzner, E. Sauer, S. Helm, T. Harder, Simone Fehlberg, and Juergen Bendig "Series of AZ-compatible negative photoresists", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210420
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KEYWORDS
Photoresist materials

Etching

Lithography

Absorption

Photolysis

Polymers

Coating

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