Paper
26 May 1995 Latent image metrology for production wafer steppers
Author Affiliations +
Abstract
A new latent image metrology technique is discussed that determines best focus with a precision of (sigma) equals 20 nm. This technique uses the existing alignment system of an ASM-L wafer stepper and requires no hardware or software modifications. The user just needs a standard chrome reticle. It can operate for machine setup at the factory, but also in-process for fully automatic self calibration of focus and tilt. A typical measurement takes a few minutes.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Dirksen, Walter de Laat, and Henry J. L. Megens "Latent image metrology for production wafer steppers", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209297
Lens.org Logo
CITATIONS
Cited by 12 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Optical alignment

Monochromatic aberrations

Scanning electron microscopy

Deep ultraviolet

Metrology

Silicon

RELATED CONTENT

0.7 NA DUV step and scan system for 150 nm...
Proceedings of SPIE (July 26 1999)
Automatic Wafer Stepper Calibration And Testing
Proceedings of SPIE (January 02 1986)
Benchmarking multimode CD-SEM metrology to 180 nm
Proceedings of SPIE (May 21 1996)
New i-line and deep-UV optical wafer stepper
Proceedings of SPIE (July 01 1991)
Comparison of state-of-the-art DUV lenses
Proceedings of SPIE (May 26 1995)
Automatic on-line wafer stepper calibration system
Proceedings of SPIE (June 01 1990)

Back to Top