Half-micrometer linewidth metrology

Stephen E. Knight; Dean C. Humphrey; Reginald R. Bowley Jr.; Robert M. Cogley

doi:10.1117/12.44429

1 July 1991 Half-micrometer linewidth metrology

Stephen E. Knight, Dean C. Humphrey, Reginald R. Bowley Jr., Robert M. Cogley

Proceedings Volume 1464, Integrated Circuit Metrology, Inspection, and Process Control V; (1991) https://doi.org/10.1117/12.44429
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

This investigation studies linewidth metrology techniques and compares SEM measurement results with an electrical linewidth probe procedure. Calibration offsets between reticle, resist, etched, and electrical probe dimensions are compared for the 500-nm nominal isolated and grouped images. These individual probe-site measurements, as monitored with a low-voltage SEM through this process, are then compared to individual-site and full-field electrical data.

Citation Download Citation

Stephen E. Knight, Dean C. Humphrey, Reginald R. Bowley Jr., and Robert M. Cogley "Half-micrometer linewidth metrology", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44429

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available