0.50 µm contact measurement and characterization

Tracy K. Lindsay; Kevin J. Orvek; Richard T. Mumaw

doi:10.1117/12.44428

1 July 1991 0.50 μm contact measurement and characterization

Tracy K. Lindsay, Kevin J. Orvek, Richard T. Mumaw

Proceedings Volume 1464, Integrated Circuit Metrology, Inspection, and Process Control V; (1991) https://doi.org/10.1117/12.44428
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A comparison of SEM measurements vs. electrical measurements of contact holes is presented. In-line SEM measurements on a Hitachi S6000 and measurements of micrographs from an off-line JEOL 845 SEM are compared to electrical measurements on a Prometrix LithoMapR system for metrology of contacts down to 0.25 micrometers size. The electrical measurements of contacts through focus/exposure variations on the stepper are shown to correlate very well with SEM measurements. Electrical measurement of contact holes in conductive films is shown to reflect actual process latitudes on oxide wafers, allowing electrical metrology to be used in optimizing lithography processes.

Citation Download Citation

Tracy K. Lindsay, Kevin J. Orvek, and Richard T. Mumaw "0.50 μm contact measurement and characterization", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44428

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