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10 April 2024 Breaching high-NA EUV dimensions with 193i anti-spacer multipatterning
Michael Murphy, Jacob Dobson, Jodi Grzeskowiak, David Power, Charlotte A. Cutler, Andrew Weloth, David Conklin
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Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 1295711 (2024) https://doi.org/10.1117/12.3010447
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
This work will describe the advancement of 193i anti-spacer technology to resolve critical trench dimensions beyond the resolution of single print EUV lithography. A through process performance evaluation will be provided for 13nm trench features from 100nm to 60nm pitch and below. A cursory review of sub-13nm feature scaling and the material factors to enable such trench dimensions will be described. The extension of 193i chemistry and associated layers to intercept EUV patternability requires an understanding of fundamental process parameters and process windows beyond standard practices. Herein, a full study of key anti-spacer parameters and their associated effects on roughness and CDU will be provided. Such variables will include resist film thickness, developer optimization and overcoat dissolution. Lastly, we will outline the ultimate scaling potential of the defined 193i anti-spacer flow and provide future avenues of development to achieve greater scaling at EUV and towards High NA EUV dimensions.
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Michael Murphy, Jacob Dobson, Jodi Grzeskowiak, David Power, Charlotte A. Cutler, Andrew Weloth, and David Conklin "Breaching high-NA EUV dimensions with 193i anti-spacer multipatterning", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 1295711 (10 April 2024); https://doi.org/10.1117/12.3010447
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KEYWORDS
Extreme ultraviolet
Lithography
Printing
Chemistry
Double patterning technology
Etching
Extreme ultraviolet lithography
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