Paper
23 March 2012 Computational study of line tip printability of sub-20-nm technology
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Abstract
This paper illustrates the increasing importance of line tip printing as measured by the size of the weak line tip zone for sub-20nm technology. This paper suggests adding line tip printability into sub-20nm lithography performance metric in addition to the conventional tip-to-tip resolution. This study shows that these two metrics sometimes respond to lithography conditions inversely. The importance of including line tip printability into technology evaluation is demonstrated by comparing LELE optical lithography and EUV lithography. Also, line tip printing with EUV lithography is explored with various illumination conditions and resist developer tones.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Yuan, Thomas Wallow, Deniz Civay, Linus Jang, Jongwook Kye, Harry Levinson, Sohan Singh, and Mark Kelling "Computational study of line tip printability of sub-20-nm technology", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832229 (23 March 2012); https://doi.org/10.1117/12.915868
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Printing

Extreme ultraviolet

Optical lithography

Lithography

Extreme ultraviolet lithography

Photomasks

Lithographic illumination

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