Paper
1 August 1990 Self-aligned resonant tunneling-diode finger structure for high cut-off frequency and device integration
Xiao J. Song, Jinbo Kuang, William J. Schaff, Paul J. Tasker, Kimiyoshi Yamasaki, Lester Fuess Eastman
Author Affiliations +
Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20914
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Planar, interdigitated In0.53Ga0.47As/GaAs finger structure resonant tunneling diodes (RTDs) have been successfully fabricated on the semi-insulating InP substrate by using a novel self-alignment and air-bridge technique. This design significantly reduces the parasitic series resistance, increases the oscillation frequency, and reduces the power loss. The front-side contact scheme also enables the monolithic integration of the RTDs in series to achieve multiple negative differential resistances.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao J. Song, Jinbo Kuang, William J. Schaff, Paul J. Tasker, Kimiyoshi Yamasaki, and Lester Fuess Eastman "Self-aligned resonant tunneling-diode finger structure for high cut-off frequency and device integration", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20914
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KEYWORDS
Resistance

Capacitance

Diodes

Fabrication

High speed electronics

Information operations

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