Paper
23 January 1990 Measurement Of The Recombination Lifetime In Semiconductor Lasers Using rf Techniques
Peter Wolf, Ronald F. Broom
Author Affiliations +
Abstract
Two techniques have been used for determining the recombination lifetime in semiconductor lasers: A capacitance bridge at 10 MHz, or a network analyzer in the range from 45 to 245 MHz. The latter, although more tedious than the former, has the advantage of allowing detection and inclusion of parasitic contributions. The AlGaAs ridge graded-index separate confinement heterostructure lasers studied here are well described by a simple equivalent circuit consisting of an ideal laser and a series resistance. Below threshold, the inverse lifetime squared exhibits a linear dependence on the forward current, as expected from simple theory. The measurements yield non-radiative lifetimes of 2.5 ... 5 ns. The bimolecular recombination constant B = 0.24 ... 0.56 x 10-10 cm3/s is smaller than the bulk values; possible reasons are discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Wolf and Ronald F. Broom "Measurement Of The Recombination Lifetime In Semiconductor Lasers Using rf Techniques", Proc. SPIE 1180, Tests, Measurements, and Characterization of Electro-Optic Devices and Systems, (23 January 1990); https://doi.org/10.1117/12.963464
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KEYWORDS
Diodes

Capacitance

Semiconductor lasers

Quantum wells

Network security

Resistance

Bridges

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