Paper
1 August 1990 Demonstration of a monolithic npn and pnp complementary HBT technology
David B. Slater Jr., Paul J. Enquist, Fayez E. Najjar, Mary Y. Chen, James A. Hutchby
Author Affiliations +
Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20910
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The monolithic integration of complementary AlGaAs/GaAs heterojunction bipolar transistors (HBTs) has been accomplished using selective MOVPE to regrow an Npn HBT on a Pnp HBT waler. A non-self- aligned mesa process was used in fabricating the transistors. Pnps (Npns) with a. minimum geometry emitter of 6?m by 12?m yielded a current gain of 300 (75) which was not degraded by the regrowth process and an ft of 2.5 (22) GHz. An inverting amplifier with feedback for unity gain, a push-pull emitter follower and a complementary Gilbert Gain Cell amplifier were fabricated and tested indicating the feasibility for high speed (Al)GaAs HBT operational amplifiers (op-amps).
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David B. Slater Jr., Paul J. Enquist, Fayez E. Najjar, Mary Y. Chen, and James A. Hutchby "Demonstration of a monolithic npn and pnp complementary HBT technology", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20910
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Cited by 13 scholarly publications and 1 patent.
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KEYWORDS
Amplifiers

Transistors

Resistance

Semiconducting wafers

High speed electronics

Photomasks

Heterojunctions

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