Negative differential resistance induced by sulfur vacancies in monolayer MoS2 transistors

Wen-Hao Chang; Chun-I Lu; Tilo H. Yang; Shu-Ting Yang; Kristan Bryan Simbulan; Ting-Hua Lu; Yann-Wen Lan

doi:10.1117/12.2674292

5 October 2023 Negative differential resistance induced by sulfur vacancies in monolayer MoS₂ transistors

Wen-Hao Chang, Chun-I Lu, Tilo H. Yang, Shu-Ting Yang, Kristan Bryan Simbulan, Ting-Hua Lu, Yann-Wen Lan

Proceedings Volume 12651, Low-Dimensional Materials and Devices 2023; 1265103 (2023) https://doi.org/10.1117/12.2674292
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States

Abstract

Extensive research has been conducted on the negative differential resistance (NDR) behavior in various electronic applications. Theoretical simulations suggest that defects in monolayer 2D materials could impact the NDR phenomenon. In this study, we experimentally validated this theoretical prediction using straightforward fabrication methods on monolayer MoS₂. To create MoS₂ transistors with a specific amount of sulfur vacancy, we employed techniques such as KOH solution treatment, electron beam irradiation, and chemical vapor deposition (CVD) using low sulfur supply. Through comprehensive analysis of the devices' electrical characteristics and spectroscopic examination, we successfully observed the NDR in the defective monolayer MoS₂ field-effect transistors (FETs) with approximately 5% sulfur vacancy, as confirmed by x-ray photoelectron spectroscopy (XPS). Moreover, this NDR effect remains stable and can be controlled by the gate electric field or light intensity at room temperature. This discovery suggests that the NDR effect in monolayer MoS₂ transistors holds promising potential for future electronic applications.

Conference Presentation

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Wen-Hao Chang, Chun-I Lu, Tilo H. Yang, Shu-Ting Yang, Kristan Bryan Simbulan, Ting-Hua Lu, and Yann-Wen Lan "Negative differential resistance induced by sulfur vacancies in monolayer MoS₂ transistors", Proc. SPIE 12651, Low-Dimensional Materials and Devices 2023, 1265103 (5 October 2023); https://doi.org/10.1117/12.2674292

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