Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness

Asha Rani; Kyle DiCamillo; Sergiy Krylyuk; Albert V. Davydov; Ratan Debnath; Payam Taheri; Makarand Paranjape; Can Korman; Mona Zaghloul

doi:10.1117/12.2503888

11 September 2018 Control of polarity in multilayer MoTe₂ field-effect transistors by channel thickness

Asha Rani, Kyle DiCamillo, Sergiy Krylyuk, Albert V. Davydov, Ratan Debnath, Payam Taheri, Makarand Paranjape, Can Korman, Mona Zaghloul

Author Affiliations +

Proceedings Volume 10725, Low-Dimensional Materials and Devices 2018; 1072515 (2018) https://doi.org/10.1117/12.2503888
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

In this study, electronic properties of field-effect transistors (FETs) fabricated from exfoliated MoTe₂ single crystals are investigated as a function of channel thickness. The conductivity type in FETs gradually changes from n-type for thick MoTe₂ layers (above ≈ 65 nm) to ambipolar behavior for intermediate MoTe₂thickness (between ≈ 60 and 15 nm) to ptype for thin layers (below ≈ 10 nm). The n-type behavior in quasi-bulk MoTe₂ is attributed to doping with chlorine atoms from the TeCl₄ transport agent used for the chemical vapor transport (CVT) growth of MoTe₂. The change in polarity sign with decreasing channel thickness may be associated with increasing role of surface states in ultra-thin layers, which in turn influence carrier concentration and dynamics in the channel due to modulation of Schottky barrier height and band-bending at the metal/semiconductor interface.

Citation Download Citation

Asha Rani, Kyle DiCamillo, Sergiy Krylyuk, Albert V. Davydov, Ratan Debnath, Payam Taheri, Makarand Paranjape, Can Korman, and Mona Zaghloul "Control of polarity in multilayer MoTe₂ field-effect transistors by channel thickness", Proc. SPIE 10725, Low-Dimensional Materials and Devices 2018, 1072515 (11 September 2018); https://doi.org/10.1117/12.2503888

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