RF modeling of MOSFETs

M. Jamal Deen; Chih-hung Chen; S. Naseh; Yuhua Cheng; M. Matloubian

doi:10.1117/12.405405

24 October 2000 RF modeling of MOSFETs

M. Jamal Deen, Chih-hung Chen, S. Naseh, Yuhua Cheng, M. Matloubian

Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405405
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

This paper reviews and also discusses some of the important issues in MOSFET Modeling for radio frequency integrated circuits (RFICs). A brief review of some popular or common MOSFET models that can predict the RF properties of MOSFETs is presented. At present, these include BSIM3v3, EKV, MOS Model 9 and adaptations of HSPICE models, and most of them are discussed here. Attention is paid to RF noise parameter extraction and modeling of MOSFETs, since this has been relatively neglected compared to the AC modeling and parameter extraction. Finally, some new and exciting result son the effects of DC electrical stresses on the microwave properties of NMOSFETs, especially the unity current-gain frequencies and maximum oscillation frequencies are presented for different stress times and at different biasing conditions. Modeling of the effects of stress on the RF properties of MOSFETs is still to be investigated.

Citation Download Citation

M. Jamal Deen, Chih-hung Chen, S. Naseh, Yuhua Cheng, and M. Matloubian "RF modeling of MOSFETs", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405405

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