Dr. M. Jamal Deen Profile

Dr. M. Jamal Deen

at McMaster Univ

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 23 February 2018 Paper

A novel biasing dependent circuit model of resonant cavity enhanced avalanche photodetectors (RCE-APDs)

Mostafa Abdelhamid, Yasser El-Batawy, M. Jamal Deen

Proceedings Volume 10526, 105261M (2018) https://doi.org/10.1117/12.2289073

KEYWORDS: Photodetectors, Absorption, Avalanche photodetectors, Quantum efficiency

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SPIE Journal Paper | 1 June 2011 Open Access

Development of a catadioptric endoscope objective with forward and side views

Roy Chih Wang, Qiyin Fang, M. Jamal Deen, David Armstrong

JBO, Vol. 16, Issue 06, 066015, (June 2011) https://doi.org/10.1117/12.10.1117/1.3593148

KEYWORDS: Endoscopes, Mirrors, Modulation transfer functions, Prototyping, Lens design, Combined lens-mirror systems, Objectives, Monte Carlo methods, Endoscopy, Imaging systems

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Proceedings Article | 22 June 2007 Paper

Low-frequency noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors: impact of carbon concentration

Jeremy Raoult, Colette Delseny, Fabien Pascal, Mathieu Marin, M. Jamal Deen

Proceedings Volume 6600, 66000G (2007) https://doi.org/10.1117/12.724559

KEYWORDS: Carbon, Transistors, Silicon, Interference (communication), Heterojunctions, Silicon carbide, Boron, Chemical species, Temperature metrology, Diffusion

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We have investigated the influence of carbon concentration on the low frequency noise (LFN) of Si/SiGe:C Heterojunction Bipolar Transistors (HBTs). The HBTs are supplied by ST-Microelectronics Crolles and are based on a 0.13 &mgr;m BiCMOS technology. Three types of transistors were studied; they only differ by the amount of carbon incorporated. When carbon is incorporated, representative noise spectra of the input current spectral density, Si_B, show important generation-recombination (G-R) components, while no such components are observed in carbon free transistors. When the 1/f noise component is unambiguously observed, the associated figure of merit K_B has a very good value close to 4.10^-10 &mgr;m². In this paper we focus on the analysis of the G-R components associated with the presence of the carbon. Most of the observed Lorentzians are associated with Random Telegraph Signal (RTS) noise. No RTS noise is found in carbon free devices. The RTS noise appears to be due to electrically active defects formed by the addition of carbon, typically observed for concentrations above the bulk solid solubility limit in silicon. The RTS noise, amplitude &Dgr;IB and the mean pulse widths (t_H, t_L), are analyzed as a function of bias voltage and temperature. The RTS amplitude is found to scale with the base current and to decrease exponentially with temperature, independently of the carbon concentration. The mean pulse widths are found to decrease rapidly with bias voltage, as 1/exp(qV_BE/kT) or stronger. Our results confirm that electrically active C-related defects are localized in the base-emitter junction, and the RTS amplitude is explained by a model based on voltage barrier height fluctuations across the base-emitter junction induced by trapped carriers in the space charge region. The observed bias dependence of mean pulse widths seems to indicate that two capture processes are involved, electron and hole capture. These C-related defects behave like recombination centers with deep energy levels rather than electron or hole traps involving trapping-detrapping process.

Proceedings Article | 20 December 2004 Paper

Modeling of waveguide-separated absorption charge multiplication-avalanche photodetector (WG-SACM-APD)

Yasser El-Batawy, M. Jamal Deen

Proceedings Volume 5577, (2004) https://doi.org/10.1117/12.567699

KEYWORDS: Photodetectors, Absorption, Waveguides, Electrons, Capacitance, Waveguide modes, Resistance, Quantum efficiency, Resistors, Performance modeling

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Proceedings Article | 20 December 2004 Paper

Effects of the parasitics on the time response of resonant-cavity-enhanced photodetectors (RCE-PDs)

Yasser El-Batawy, M. Jamal Deen

Proceedings Volume 5577, (2004) https://doi.org/10.1117/12.566354

KEYWORDS: Photodetectors, Absorption, Resistance, Capacitance, Electrons, Avalanche photodetectors, Quantum efficiency, Mirrors, Inductance, Signal to noise ratio

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Proceedings Article | 25 May 2004 Paper

Low-frequency noise in SiGeC-based pMOSFETs

M. Jamal Deen, Ognian Marinov, David Onsongo, Sanjay Banerjee

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.548006

KEYWORDS: Field effect transistors, Data modeling, Neptunium, Scattering, Oxides, Statistical analysis, Heterojunctions, Transistors, Instrument modeling, Statistical modeling

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Proceedings Article | 25 May 2004 Paper

Characterization, modeling, and implementation of high-frequency noise in MOSFETs for RF IC design

Chih-Hung Chen, Feng Li, M. Jamal Deen

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.547190

KEYWORDS: Field effect transistors, Instrument modeling, Transistors, Resistance, Modulation, Metals, Lab on a chip, Scattering, Signal to noise ratio, Diffusion

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Proceedings Article | 1 July 2003 Paper

Resonant cavity enhanced photodetectors (RCE-PDs): structure, material, analysis and optimization

Yasser El-Batawy, M. Jamal Deen

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.482484

KEYWORDS: Photodetectors, Quantum efficiency, Absorption, Mirrors, Reflectivity, Silicon, Diffusion, Inductance, Electrons, Gallium arsenide

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Proceedings Article | 12 May 2003 Paper

Noise and charge transport in polymer thin film structures

Ognian Marinov, M. Jamal Deen, J. Yu, G. Vamvounis, Steven Holdcroft, W. Woods

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.485990

KEYWORDS: Polymers, Transistors, Molybdenum, Electrodes, Polymer thin films, Interfaces, Resistance, Thin films, Semiconductors, Field effect transistors

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Proceedings Article | 12 May 2003 Paper

Comparison of low-frequency noise in III-V and Si/SiGe HBTs

Fabien Pascal, Sylvie Guenard-Jarrix, Colette Delseny, Annick Penarier, Cyril Chay, M. Jamal Deen

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488966

KEYWORDS: Transistors, Silicon, Surface plasmons, Silicon carbide, Germanium, Oxides, Resistance, Gallium arsenide, Heterojunctions, Analog electronics

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Proceedings Article | 12 May 2003 Paper

Physical model for low-frequency noise in avalanche breakdown of PN junctions

Ognian Marinov, M. Jamal Deen

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.497403

KEYWORDS: Switching, Diodes, Resistance, Device simulation, Ionization, Diffusion, Semiconductors, Reverse modeling, Stochastic processes, Silicon

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Proceedings Article | 12 May 2003 Open Access

Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

M. Jamal Deen, Fabien Pascal

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488850

KEYWORDS: Oxides, Transistors, Interfaces, Field effect transistors, Silicon, Analog electronics, Fluorine, Integrated circuits, Information technology, Resistance

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Proceedings Article | 12 May 2003 Paper

Effects of body biasing on the low-frequency noise of NMOSFETs from a 130-nm CMOS technology

Mathieu Marin, M. Jamal Deen, Mario de Murcia, Pierre Llinares, Jean Charles Vildeuil

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488964

KEYWORDS: Transistors, CMOS technology, Oxides, Capacitance, Denoising, Amplifiers, Field effect transistors, Electronics, Analog electronics, Oscillators

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Proceedings Article | 25 September 2001 Paper

Time-domain model for an avalanche photodiode at low-bias

N. Das, M. Jamal Deen

Proceedings Volume 4417, (2001) https://doi.org/10.1117/12.441319

KEYWORDS: Avalanche photodetectors, Diffusion, Absorption, Performance modeling, Avalanche photodiodes, Telecommunications, Interfaces, Ionization, Fourier transforms, Indium gallium arsenide

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Proceedings Article | 25 September 2001 Paper

High-performance photodetectors for fiber-optic communications

M. Jamal Deen, N. Das

Proceedings Volume 4417, (2001) https://doi.org/10.1117/12.441288

KEYWORDS: Palladium, Absorption, Avalanche photodetectors, Photodetectors, Waveguides, Indium gallium arsenide, Heterojunctions, Quantum efficiency, Fiber optic communications, Metals

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Proceedings Article | 12 June 2001 Paper

Theoretical approach to frequency response of resonant-cavity avalanche photodiodes

Yegao Xiao, M. Jamal Deen

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429434

KEYWORDS: Electrons, Avalanche photodetectors, Absorption, Mirrors, Avalanche photodiodes, Photodetectors, Picosecond phenomena, Quantum efficiency, Resistance, Silicon

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Proceedings Article | 12 June 2001 Paper

Time-domain modeling of InP/InGaAs avalanche photodiodes

Yegao Xiao, M. Jamal Deen

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429427

KEYWORDS: Instrument modeling, Performance modeling, Avalanche photodetectors, Statistical modeling, Data modeling, Diffusion, Absorption, Reverse modeling, Ionization, Electrons

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Proceedings Article | 24 October 2000 Paper

RF modeling of MOSFETs

M. Jamal Deen, Chih-hung Chen, S. Naseh, Yuhua Cheng, M. Matloubian

Proceedings Volume 4228, (2000) https://doi.org/10.1117/12.405405

KEYWORDS: Field effect transistors, Molybdenum, Transistors, Resistance, Roentgenium, Instrument modeling, Microwave radiation, Thermal modeling, Systems modeling, Integrated circuits

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Proceedings Article | 28 April 1999 Paper

Photodetectors for fiber optic communication systems

M. Jamal Deen, R. Hardy, Yegao Xiao

Proceedings Volume 3666, (1999) https://doi.org/10.1117/12.347950

KEYWORDS: Avalanche photodetectors, Photodetectors, Fiber optic communications, Telecommunications, Photodiodes, Metals, Systems modeling, Quantum efficiency, Absorption, Stochastic processes

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Proceedings Article | 8 April 1998 Paper

Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)

Serguei An, W. Clark, M. Jamal Deen, Anthony Vetter, M. Svilans

Proceedings Volume 3287, (1998) https://doi.org/10.1117/12.304505

KEYWORDS: Ionization, Avalanche photodetectors, Capacitance, Absorption, Avalanche photodiodes, Temperature metrology, Telecommunications, Quantum efficiency, Thermoelectric materials, Silicon

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Proceedings Article | 15 September 1993 Paper

Effects of space-radiation damage and temperature on CCD noise for the Lyman FUSE mission

Richard Murowinski, Linzhuang Gao, M. Jamal Deen

Proceedings Volume 1953, (1993) https://doi.org/10.1117/12.156564

KEYWORDS: Charge-coupled devices, Transistors, Radiation effects, CCD image sensors, Silicon, Sensors, Field effect transistors, Interfaces, Space telescopes, Space operations

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