In recent years the promise of EUV lithography became a high-volume-manufacturing reality. With already more than 160 EUV scanners in the field worldwide (and counting!), EUV lithography has now a solid footing in market and is currently the main enabler for the latest generations of chips we all know and use. To enable the future generations of chips, with even smaller feature sizes than what we currently have on the market, ZEISS and ASML are developing a new generation of EUV tools, where the numerical aperture (NA) of their optics is increased from the current 0.33 to 0.55. These high-NA tools will allow the shrink prescribed by the Moore's Law to continue well into this decade, by allowing the lithographers to print 8nm half-pitch in a single exposure. In this presentation we will remind briefly on high-NA optics concepts as compared to its 0.33-NA predecessor. We will give insight into how advanced the current production status at ZEISS is: not only into mirror surface polishing, coating, metrology, but also mirror handling and integration as well as shipment. Moreover, besides what happens in high-NA program, you will also see the current status and ongoing improvements to 0.33-NA optics.
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