All silicon approach to modulation and detection at λ = 2 µm

Callum G. Littlejohns; Milos Nedeljkovic; Wei Cao; Jordi Soler Penades; David Hagan; Jason J. Ackert; Mohamed Saïd Rouifed; Wanjun Wang; Zecen Zhang; Haodong Qiu; Tina Guo Xin; Andrew P. Knights; Graham T. Reed; Goran Z. Mashanovich; Hong Wang; David J. Thomson

doi:10.1117/12.2288951

22 February 2018 All silicon approach to modulation and detection at λ = 2 μm

Callum G. Littlejohns, Milos Nedeljkovic, Wei Cao, Jordi Soler Penades, David Hagan, Jason J. Ackert, Mohamed Saïd Rouifed, Wanjun Wang, Zecen Zhang, Haodong Qiu, Tina Guo Xin, Andrew P. Knights, Graham T. Reed, Goran Z. Mashanovich, Hong Wang, David J. Thomson

Author Affiliations +

Proceedings Volume 10538, Optical Interconnects XVIII; 105380Y (2018) https://doi.org/10.1117/12.2288951
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Silicon photonics has traditionally focused on near infrared wavelengths, with tremendous progress seen over the past decade. However, more recently, research has extended into mid infrared wavelengths of 2 μm and beyond. Optical modulators are a key component for silicon photonics interconnects at both the conventional communication wavelengths of 1.3 μm and 1.55 μm, and the emerging mid-infrared wavelengths. The mid-infrared wavelength range is particularly interesting for a number of applications, including sensing, healthcare and communications. The absorption band of conventional germanium photodetectors only extends to approximately 1.55 μm, so alternative methods of photodetection are required for the mid-infrared wavelengths. One possible CMOS compatible solution is a silicon defect detector. Here, we present our recent results in these areas. Modulation at the wavelength of 2 μm has been theoretically investigated, and photodetection above 25 Gb/s has been practically demonstrated.

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Callum G. Littlejohns, Milos Nedeljkovic, Wei Cao, Jordi Soler Penades, David Hagan, Jason J. Ackert, Mohamed Saïd Rouifed, Wanjun Wang, Zecen Zhang, Haodong Qiu, Tina Guo Xin, Andrew P. Knights, Graham T. Reed, Goran Z. Mashanovich, Hong Wang, and David J. Thomson "All silicon approach to modulation and detection at λ = 2 μm", Proc. SPIE 10538, Optical Interconnects XVIII, 105380Y (22 February 2018); https://doi.org/10.1117/12.2288951

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