Ms. Anna Tchikoulaeva Profile

Anna Tchikoulaeva

SPIE Involvement:

Conference Program Committee | Author

Websites:

Company Website

Proceedings Article | 9 April 2020 Paper

Enabling EUVL high-volume manufacturing with actinic patterned mask inspection

Anna Tchikoulaeva, Hiroki Miyai, Tsunehito Kohyama, Kiwamu Takehisa, Haruhiko Kusunose

Proceedings Volume 11323, 113231K (2020) https://doi.org/10.1117/12.2557858

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Reticles, Defect detection, High volume manufacturing, Particles, Pellicles, Deep ultraviolet

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Proceedings Article | 10 April 2013 Paper

Productivity improvement through automated operation of reticle defect inspection tools in a wafer fab environment

Christian Holfeld, Heiko Wagner, Anna Tchikoulaeva, Steffen Loebeth, Stephan Melzig, Yulin Zhang, Shinichi Tanabe, Takenori Katoh, Koichi Moriizumi

Proceedings Volume 8681, 868126 (2013) https://doi.org/10.1117/12.2014480

KEYWORDS: Inspection, Reticles, Semiconducting wafers, Defect inspection, Photomasks, Manufacturing, Factory automation, Defect detection, Wafer manufacturing, Parallel processing

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Proceedings Article | 1 April 2013 Paper

EUV actinic blank inspection: from prototype to production

Anna Tchikoulaeva, Hiroki Miyai, Tomohiro Suzuki, Kiwamu Takehisa, Haruhiko Kusunose, Takeshi Yamane, Tsuneo Terasawa, Hidehiro Watanabe, Soichi Inoue, Ichiro Mori

Proceedings Volume 8679, 86790I (2013) https://doi.org/10.1117/12.2011776

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect inspection, Prototyping, Extreme ultraviolet lithography, Defect detection, High volume manufacturing, Metrology, Mirrors

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Proceedings Article | 14 October 2011 Paper

Printability and detection of backside defects on photomasks

Guoxiang Ning, Christian Holfeld, Anna Tchikoulaeva, Martin Sczyrba, Angeline Ho, Karsten Bubke, Soon Yoeng Tan, Andre Holfeld, Byoung Il Choi

Proceedings Volume 8166, 81664D (2011) https://doi.org/10.1117/12.899127

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Reticles, Particles, Photomasks, Inspection, Glasses, Defect detection, Manufacturing, Metals

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Reticles are contaminated during its lifetime and can catch particles as large as several tens of microns. Such defects on the backside of photomasks are usually considered as uncritical and thus do not receive much attention. Backside defects are out of focus by the mask thickness during wafer exposure and cannot be directly imaged on wafer. However, the shadow of the defects changes the local illumination of the mask patterns and may result in spatial variation of critical dimension (CD) on wafer depending on numerical aperture (NA) and pupil shape. There have been only a few investigations on printability of backside defects in the past, and no data are available for the most advanced technology nodes. Reticles are regularly inspected for particles on the glass side in the wafer fab but limits for acceptable defect size are based on estimations. Detection of non-acceptable particles causes exposed wafers being either delayed or reworked with impact on throughput and cost performance. It is therefore important to gain better understanding of critical sizes of backside defects and of appropriate detection capabilities. We have designed and manufactured a test mask with repeating patterns of 20nm, 28nm and 40nm technology node ranging from contact and line/space critical layers to non-critical implant layers. Programmed chrome defects of varying size are placed on the backside of the mask opposite to the repeating front side patterns in order to measure the spatial variation of transmission and wafer CD caused by the backside defects. The test mask was printed on a bare Silicon wafer and the size of printed features was measured by spatial sampling. Wafer CD variation for different backside defect sizes are demonstrated and compared for 28nm node first metal layer. Although the opaque chrome defects on the backside do not behave like real particles they aim on deriving a print threshold for backside particles based on actual wafer data. After such critical size of backside defects is obtained the reticle was also utilized to investigate the detection ability of backside defects by defect inspection of the reticle.

Proceedings Article | 14 October 2011 Paper

Reticle process monitoring and qualification based on reticle CDU and wafer CDU correlation

Guoxiang Ning, Byoung Il Choi, Christian Holfeld, Yee Ta Ngow, Sia Kim Tan, Anna Tchikoulaeva, Fang Hong Gn

Proceedings Volume 8166, 81662N (2011) https://doi.org/10.1117/12.898801

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Metals, Etching, Photomasks, Multilayers, 3D metrology, Scanners, Metrology

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Proceedings Article | 25 May 2010 Paper

New type of haze formation on masks fabricated with Mo-Si blanks

E. Foca, A. Tchikoulaeva, B. Sass, C. West, P. Nesladek, R. Horn

Proceedings Volume 7748, 774811 (2010) https://doi.org/10.1117/12.864478

KEYWORDS: Air contamination, Quartz, Photomasks, Inspection, Ions, Chemical analysis, Scanning electron microscopy, Nitrogen, Data modeling, Oxidation

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Proceedings Article | 20 March 2010 Paper

Actinic imaging of native and programmed defects on a full-field mask

I. Mochi, K. Goldberg, B. La Fontaine, A. Tchikoulaeva, C. Holfeld

Proceedings Volume 7636, 76361A (2010) https://doi.org/10.1117/12.846670

KEYWORDS: Extreme ultraviolet, Photomasks, Scanning electron microscopy, Inspection, Deep ultraviolet, Reticles, Semiconducting wafers, Extreme ultraviolet lithography, Multilayers, Opacity

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Proceedings Article | 20 March 2010 Paper

Assessing EUV mask defectivity

Uzodinma Okoroanyanwu, Anna Tchikoulaeva, Paul Ackmann, Obert Wood, Bruno La Fontaine, Karsten Bubke, Christian Holfeld, Jan Hendrik Peters, Sumanth Kini, Sterling Watson, Isaac Lee, Bo Mu, Phillip Lim, Sudhar Raghunathan, Carol Boye

Proceedings Volume 7636, 76360J (2010) https://doi.org/10.1117/12.847348

KEYWORDS: Reticles, Inspection, Photomasks, Semiconducting wafers, Extreme ultraviolet, Defect detection, Line edge roughness, Scanning electron microscopy, Defect inspection, Optical lithography

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Proceedings Article | 23 September 2009 Paper

High MEEF reticle inspection strategy

Anna Tchikoulaeva, Remo Kirsch, Stephanie Winkelmeier

Proceedings Volume 7488, 74880D (2009) https://doi.org/10.1117/12.834830

KEYWORDS: Inspection, Reticles, Wafer inspection, Semiconducting wafers, Photomasks, Environmental sensing, Deep ultraviolet, Scanning electron microscopy, Defect detection, Contamination

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Proceedings Article | 18 March 2009 Paper

EUVL reticle defectivity evaluation

A. Tchikoulaeva, U. Okoroanyanwu, O. Wood, B. La Fontaine, C. Holfeld, S. Kini, M. Peikert, C. Boye, C.-S. Koay, K. Petrillo, H. Mizuno

Proceedings Volume 7271, 727117 (2009) https://doi.org/10.1117/12.815525

KEYWORDS: Reticles, Inspection, Semiconducting wafers, Wafer inspection, Scanning electron microscopy, Photomasks, Defect detection, Extreme ultraviolet lithography, Extreme ultraviolet, Multilayers

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Proceedings Article | 18 March 2009 Open Access

Integration of EUV lithography in the fabrication of 22-nm node devices

Obert Wood, Chiew-Seng Koay, Karen Petrillo, Hiroyuki Mizuno, Sudhar Raghunathan, John Arnold, Dave Horak, Martin Burkhardt, Gregory McIntyre, Yunfei Deng, Bruno La Fontaine, Uzodinma Okoroanyanwu, Anna Tchikoulaeva, Tom Wallow, James H.-C. Chen, Matthew Colburn, Susan S.-C. Fan, Bala Haran, Yunpeng Yin

Proceedings Volume 7271, 727104 (2009) https://doi.org/10.1117/12.814379

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Semiconducting wafers, Etching, Optical lithography, Photoresist processing, Lithography, Imaging systems, Copper

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Proceedings Article | 17 October 2008 Paper

An investigation of EUV lithography defectivity

Kevin Cummings, Thomas Laursen, Bill Pierson, Sang-in Han, Robert Watso, Youri van Dommelen, Brian Lee, Yunfei Deng, Bruno La Fontaine, Thomas Wallow, Uzo Okoroanyanwu, Obert Wood, Anna Tchikoulaeva, Christian Holfeld, Jan Hendrick Peters, Chiew-seng Koay, Karen Petrillo, Tony DiBiase, Sumanth Kini, Hiroyuki Mizuno

Proceedings Volume 7122, 71222G (2008) https://doi.org/10.1117/12.801528

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Inspection, Particles, Scanning electron microscopy, Wafer inspection, Defect inspection, Silicon

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Proceedings Article | 19 May 2008 Paper

ACLV degradation: root cause analysis and effective monitoring strategy

Anna Tchikoulaeva, Andre Holfeld, Markus Arend, Eugen Foca

Proceedings Volume 7028, 702816 (2008) https://doi.org/10.1117/12.793047

KEYWORDS: Reticles, Semiconducting wafers, Scanning electron microscopy, Critical dimension metrology, Inspection, Chromium, Photomasks, Transmission electron microscopy, Metrology, Air contamination

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Proceedings Article | 26 March 2008 Paper

The use of EUV lithography to produce demonstration devices

Bruno LaFontaine, Yunfei Deng, Ryoung-Han Kim, Harry Levinson, Sarah McGowan, Uzodinma Okoroanyanwu, Rolf Seltmann, Cyrus Tabery, Anna Tchikoulaeva, Tom Wallow, Obert Wood, John Arnold, Don Canaperi, Matthew Colburn, Kurt Kimmel, Chiew-Seng Koay, Erin Mclellan, Dave Medeiros, Satyavolu Papa Rao, Karen Petrillo, Yunpeng Yin, Hiroyuki Mizuno, Sander Bouten, Michael Crouse, Andre van Dijk, Youri van Dommelen, Judy Galloway, Sang-In Han, Bart Kessels, Brian Lee, Sjoerd Lok, Brian Niekrewicz, Bill Pierson, Robert Routh, Emil Schmit-Weaver, Kevin Cummings, James Word

Proceedings Volume 6921, 69210P (2008) https://doi.org/10.1117/12.772933

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Semiconducting wafers, Transistors, Extreme ultraviolet, Optical proximity correction, Photoresist processing, Etching, Metals, Scanners

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Showing 5 of 14 publications

Conference Committee Involvement (21)

Optical and EUV Nanolithography XXXVIII

23 February 2025 | San Jose, California, United States

Photomask Technology 2024

29 September 2024 | Monterey, California, United States

Optical and EUV Nanolithography XXXVII

26 February 2024 | San Jose, California, United States

Optical and EUV Nanolithography XXXVI

27 February 2023 | San Jose, California, United States

Photomask Technology 2022

26 September 2022 | Monterey, California, United States

Optical and EUV Nanolithography XXXV

25 April 2022 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography XII

22 February 2021 | Online Only, California, United States

Extreme Ultraviolet (EUV) Lithography XI

24 February 2020 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IX

26 February 2018 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VIII

27 February 2017 | San Jose, California, United States

Photomask Technology

12 September 2016 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VII

22 February 2016 | San Jose, California, United States

Photomask Technology 2015

29 September 2015 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography VI

23 February 2015 | San Jose, California, United States

Photomask Technology 2014

16 September 2014 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography V

24 February 2014 | San Jose, California, United States

SPIE Photomask Technology

10 September 2013 | Monterey, California, United States

Extreme Ultraviolet (EUV) Lithography IV

25 February 2013 | San Jose, California, United States

Photomask Technology

11 September 2012 | Monterey, California, United States

Photomask Technology

19 September 2011 | Monterey, California, United States

Photomask Technology

13 September 2010 | Monterey, California, United States

Showing 5 of 21 Conference Committees

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