In this paper, we report on a MOS-like structured Si photodetector whose response range covers UV-VIS-NIR with good
responsivity. The devices have an Al/Silicon-Rich Oxide (SRO)/Si MOS-like structure fabricated with standard Si IC
technology. Its reverse leakage current is as small as 10-10 A at V= -5 V. However, when illuminated with white or UV
light with intensity of ~3.6 mW/cm2, the reverse current increase greatly. The photocurrent to dark current ratio can be as
high as 1.5×105 for white light and 8.7×104 for UV light at V= -5 V, indicating that the structure is very sensitive to both
visible and UV light. The spectral response of the device shows good responsivity from 200 nm to near infrared, with
maximum responsivity of 0.78 A/W at 900 nm. The role of the SRO layer and the Si substrate in obtaining such a high
photoresponse in UV-VIS-NIR range was analyzed.
p-type poly-Si thin films were prepared by aluminum induced crystallization (AlC) and doping of a-Si:H. The a-Si:H precursors were deposited by plasma enhanced chemical vapor deposition on glass substrates and then covered with thin Al layers of different thickness. The crystallization was performed by conventional thermal annealing. X-ray diffraction and secondary ion mass spectroscopy measurements were carried out to study the structure change and the Al profile in the annealed films. Resistivity, Hall mobility and carrier concentration were also measured. Results showed that poly-Si films could be obtained by annealing a-Si:H in contact with a thin Al layer at 450 - 550 degree(s)C for 5 - 60 minutes. The crystallized films are p-type and have low resistivity, high Hall mobility and carrier concentration of 0.06 (Omega) cm, 20 cm2/Vs and approximately 1018 cm-3, respectively, largely improved compared with the reported results.
In this paper we report the experimental results on the preparation and the properties of hydrous nickel oxide thin films, which can possibly be used as a display material. The material is prepared by cathodic electrodeposition method by changing the deposition parameters for optimizing the deposition conditions. X-ray diffraction and transmission electron micrograph measurements were performed to study the structural properties of the films. The electrochromic properties such as switching speed, spectra response, open circuit memory and durability has been studied. The results show that the deposited material is a promising candidate for display.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.