The impact of the interface effect on the etching accuracy of a non-single-layer structure was utilized as a starting point in this work to analyze the correlation between the integrated structure's film surface/interface temperature field, stress field distribution, and interface mutation. Based on single-factor etching experiments, the relationship between the temperature field, stress field, and laser characteristic parameters was evaluated via a combination of theoretical analysis and numerical simulation. For polyimide-based metal aluminum film, a connection between scanning speed and etching characteristic parameters was discovered. The results illustrate that when Al/PI (aluminum film thickness of 2μm) was irradiated by a laser, the interface temperature reached a certain value, which caused distortion of the film and substrate. Changes in the distribution of the temperature and stress fields of the film affect the heat transfer in the system and thus affect the thermodynamic trajectory, thermal feedback, etching rate, and shape of the target film surface. Ultimately, the etching and removal of the Al/PI integration of the non-single-layer structure are attributed to the interplay of thermal and stress field effects.
KEYWORDS: Atomic layer deposition, Adsorption, Monte Carlo methods, Thin films, Aluminum, Molecules, Thin film deposition, Waveguides, Satellites, Thin film growth
Feasibility of thin films deposited on inner wall of rectangular pipes with length aspect ratio up to 50 by atomic layer deposition was studied, by solving kinetics equation of gas adsorption on inner wall of pipes. And the time for reactants to reach saturated adsorption in pipes was calculated. Furthermore, the process of thin film deposition by atomic layer deposition was simulated by Kinetic Monte Carlo method, and a growth model for atomic layer deposition of aluminum on inner wall of long rectangular pipes was established.
The effect of argon ion bombardment on interface of silver and high oriented pyrogenic graphite (HOPG) was investigated by atomic force microscopy. The Ag/HOPG interface morphology has been explored as a function of irradiation time. It can be seen that the size of crystal particle on HOPG is almost unchanged with increase of irradiation time, while the size of Ag crystal particle in part of the terrace increased and became highly ordered. There is no obvious mixing between Ag and HOPG, and Ag particles in nanoscale are isolated on HOPG surface. This will result in the reduction of depth resolution of the surface analysis by ion sputtering technique.
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