New absorber materials are currently being developed for next-generation EUV lithography. In particular, the demand for low-refractive-index (low-n) materials has been increasing in recent years. There are many types of low-n materials, but deciding which material to use requires considering both wafer lithography and mask making perspectives. In this study, various types of low-n materials were evaluated through wafer lithography simulations and mask making assessments. Simulations were conducted and revealed the inherent strengths and weaknesses of each material, thereby providing a balanced perspective on their performance. In addition to the evaluation based on simulations, the actual mask processability of the absorbers was assessed.
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