We report on a ternary blend of SEBS, the donor polymer poly(3-hexylthiophene-2,5-diyl), and the small-molecule acceptor Indene-C60 bisadduct that yields an elastomeric bulk-heterojunction (e-BHJ) with skin-like mechanical properties. This is, with low Young’s moduli < 10 MPa and a high strain at break ca. 190%. We also demonstrate that stretchable e-BHJ enables stretchable organic photodiodes with measured median root-mean-squared electronic noise values in the tens of femtoampere range and measured noise equivalent power values at 653 nm between 13 and 24 pW at strain values up to 60%, yielding specific detectivity values in the 100 Giga-Jones range.
In this talk, we will discuss a detailed study of the performance of organic photodiodes (OPDs) based on polymeric bulk heterojunctions. We will show that their performance is comparable with that of low-noise SiPDs in all metrics, except response time within the visible spectral range. Furthermore, OPDs present significant advantages over their inorganic counterparts since they can be fabricated on flexible substrates and their level of performance remains unprecedented even when their area is increased. Advantages of OPDs are further illustrated and quantified in a biometric monitoring application that uses ring-shaped, large-area, flexible OPDs, while maintaining low-noise SiPD-level performance. We will discuss how this remarkable performance arises from the selection of photoactive layer materials and by device-geometry optimization without charge-blocking layers.
In this talk, we will present organic photodiodes (OPDs) based on polymeric bulk heterojunctions with a level of performance that within the visible spectral range, rivals that of low-noise SiPDs in all metrics, except response time. Large-area OPDs on rigid and flexible substrates retain an unprecedented level of performance. Advantages of OPDs are further illustrated and quantified in a biometric monitoring application that uses ring-shaped, large-area, flexible OPDs, while maintaining low-noise SiPD-level performance. We will discuss how this remarkable performance arises from the selection of photoactive layer materials and by device-geometry optimization without charge-blocking layers.
We developed a simple method to improve the stability of organic field-effect transistors (OFETs) with bilayer gate dielectrics. The bilayer gate dielectric comprises an amorphous fluoropolymer (CYTOP) layer and an Al2O3-HfO2 nanolaminate (NL) grown by the atomic layer deposition (ALD) technique. In the OFETs with bilayer gate dielectrics, two aging mechanisms exist, and they cause the shifts of threshold voltage in opposite directions during long-term operation. By engineering the bilayer gate dielectric, the effects of these two mechanisms can compensate, leading to devices with remarkable operational stability that is comparable or superior to that of commercial inorganic counterparts. The NL grown by ALD shows excellent encapsulation property and improves the environmental stability of the OFETs. The devices are tested by exposing the devices to high temperature and high moisture conditions (i.e., the standard 85/85 condition, meaning 85°C and 85% relative humidity). The results of OFETs with CYTOP/NL bilayer gate dielectrics are presented and compared to those OFETs with Al2O3 gate dielectrics.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.