This presentation summarizes recent work at the Laser Thermal Laboratory on the laser chemical processing of two-dimensional (2D) layered materials and the laser-aided atomic laser etching (ALEt) of semiconductors. Spatially selective laser doping of transition metal dichalcogenides (TMDCs), reversible writing of dopant patterns in graphene and fabrication of functional devices have been accomplished. Digital self-limited etching of semiconductors has been demonstrated.
This presentation summarizes recent work at the Laser Thermal Laboratory on the laser-aided processing and functionalization of two-dimensional (2D) layered materials and the laser chemical processing of semiconductors.
We present a temporally and spatially resolved photoluminescence (PL) measurement technique developed to rapidly characterize fused silica damage sites and determine their propensity to grow under subsequent laser irradiation. A diffusional model is used to describe the observed PL dynamics and correlation to the local damage morphologies. We believe that our measurement and analysis approach can allow rapid identification of growth-prone damage sites, providing a pathway to fast, non-destructive predictions of laser-induced damage growth and enable selective damage site mitigation which will greatly reduce the time required to recycle NIF’s optics.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.