A density-dependent two-temperature model is applied to describe laser excitation and the following relaxation processes of silicon in an external electric field. Two approaches on how to describe the effects of the external electric field are presented. The first approach avoids the buildup of internal electric fields due to charge separation by assuming ambipolar diffusion and adds an additional carrier-pair current. In the second approach, electrons and holes are treated separately to account for charge separation and the resulting shielding of the external electric field inside the material. The two approaches are compared to experimental results. Both the first approach and the experimental results show similar tendencies for optimization of laser ablation in the external electric field.
During the last decades laser micromachining became a valuable tool for many applications in automotive, medicine, tool construction, or mobile technology. Beside the quality, processing time and production costs are crucial questions. A promising approach to achieve high throughput combined with good processing quality represent laser ablation by an assisting magnetic-field. Therefore, we studied the influence of an applied magnetic field to the ablation behaviour of silicon by using short and ultrashort laser pulses. Based on the experimental results we report on a first theoretical model that addresses the energy distribution of the heated electrons in the irradiated area.
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