During the past decades, much research has focused on on-chip optical interconnection. Integrated photonic circuit (PIC) plays a crucial role for the realization of the on-chip optical interconnection. Due to the lack of the efficiently silicon laser sources, increasing attention is now devoted to the hybrid PIC which integrating III-V materials lasers and silicon photonic circuits. In this paper, we present and give details about a novel surface emitting (SE) laser emitting at 1550nm (longwavelength) adopting horn-ridge-waveguide design to reduce the coupling loss from the SE-laser to the SOI platform. The proposed novel surface emitting laser is based on the high-order grating structure. This design retains the advantages of edge emitting lasers while realizing the surface emitting through a high contrast high-order grating which can be fabricated by ordinary photolithography and etching. The grating period of the high contrast high-order grating is longer than traditional first-order grating. A grating period over 1000nm as well as no regrowth are both key prerequisites for simple fabrication. Low-cost, high-efficiency grating fabrication technology can be introduced to the fabrication of sixth-order grating, such as the standard photolithography. Generally, the emitting light of the SE-laser is perpendicular to the surface of the laser, thus a huge coupling loss always exists because of the back scattering. The horn-ridge-waveguide was inserted to the laser to realize an “equivalent chirp” in the high-order surface grating. Then, the emitting light of the SE-laser is no longer perpendicular to the surface of the laser, the huge back scattering caused coupling loss is well avoided. The transverse mode properties of the proposed SE laser was analyzed by the FDTD solution, and the laser properties was analyzed by the traveling-wave model. The simulation results show that a single-mode operation with a linear output power of 20 mW and a high coupling efficiency of 40% can be achieved using this novel design.
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