Silicon-organic hybrid (SOH) modulators are promising as they have large bandwidth, high modulation efficiency and low optical loss. In this paper, we present the optical and electrical design and simulation of a high-speed travelling wave SOH modulator with multiple interplay parameters. We also implement the electro-optical co-optimization to delve into the influence of the key design parameters and propose the design guideline. The results demonstrate a modulator with 3 dB bandwidth of 72 GHz, modulation efficiency of 1.26 Vmm and optical loss less than 1 dB.
Low-cost tunable lasers are key enablers for wide deployment of dense wavelength division multiplexing (DWDM) technology in upcoming 5G wireless networks. Simple and compact tunable V-cavity laser (VCL) have been previously reported with direct modulation up to 10Gbps. The transmission distance was limited to below 10km due to wavelength chirp and chromatic dispersion of optical fiber in the telecom C-band. Here we present an electro-absorption modulated tunable V-cavity laser (VCL) based on InGaAlAs/InP multiple quantum wells. The modulator is monolithically integrated with the half-wave coupled VCL, which are fabricated with a single shallow etch for ridge waveguides and a single deep etch step for reflecting facets and trenches. No grating nor epitaxial regrowth is required. A deep-etched trench serves as the partial reflecting front mirror for the laser, while providing an excellent electrical isolation between the laser and the modulator. 50-channel wavelength tuning with 100 GHz spacing is achieved, with side-mode suppression ratio as high as 47 dB. Error-free transmission over 50 km is demonstrated at 10 Gbps, with receiver sensitivity better than -23 dBm.
A 3-section deep etched Q-modulated slotted Fabry-Perot laser (QMSFP) composed of a modulator, a gain section and a filter is designed and simulated with transfer matrix method and traveling wave method and finally experimentally demonstrated in this paper. This QMSFP has been fabricated in 1550 nm InGaAsP/InP-MQW wafer with Quantum Well Intermixing (QWI) technology. The static measurement results show that an extinction ratio (ER) of 13.6 dB can be achieved with the modulator length of 66.4 μm and the reverse bias of 0 V and 6.5 V at specific injection current in the gain section and filter section. The lasing threshold current difference between ON and OFF states can approach 10 mA under fixed current of the filter section. The Side Mode Suppression Ratio (SMSR) of the ON state is >34 dB with the measured output power from the front face >149 μW. There is no mode-hop between ON and OFF state. The dynamic simulation results under high speed modulation will also be presented.
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