Magnetic tunnel junctions (MTJs) based on a CoFeB/MgO/CoFeB trilayer structure exhibit a giant tunnel magnetoresistance (TMR) effect. They can be grown on a commercialized Si wafer and can be combined with various magnetic materials into a multilayered structure. These advantages drive us to apply the CoFeB/MgO/CoFeB-MTJs to magnetic sensor (hereafter called TMR sensor) that can be used at room temperature, can be microfabricated into a nanometer-scale, and can be driven with a small power consumption. Very recently, its magnetic field detectivity has reached a sub-pT level which enables us to detect a human bio-magnetic fields. These outstanding characteristics are desirable for a next-generation smart society. In this talk, we will introduce our recent works on development of multilayered structures for the TMR sensor.
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