We report enhanced nonlinear optics in integrated nanophotonic chips through the use of integrated with 2D graphene oxide (GO) films. We investigate nanophotonic platforms including silicon, silicon nitride and high index doped silica. Due to the high Kerr nonlinearity of GO films and low nonlinear absorption we observe significant enhancement of third-order nonlinear processes. In particular, in silicon we observe an increase in both the Kerr nonlinearity and nonlinear figure of merit of up to 20 times. These results show the strong capability of GO films for improving the nonlinear optical performance of integrated photonic devices.
Self-phase modulation (SPM) is an important third-order nonlinear optical process that has been widely used in many applications, such as broadband optical sources, optical diodes, optical spectroscopy, pulse compression, and many others. The ability to realize SPM based on-chip integrated photonic devices will reap attractive benefits of compact footprint, high stability, high scalability, and low-cost mass production. Here, we experimentally investigate enhanced SPM in silicon nitride (Si3N4) waveguides by integrating with 2D graphene oxide (GO) films. The on-chip integration of GO films is achieved on Si3N4 waveguides through a solution-based, transfer-free, layer-by-layer coating method with precise control of the film thickness. We use both picosecond and femtosecond optical pulses to perform detailed SPM measurements. Owing to the high Kerr nonlinearity of GO, the GO-coated waveguides show significantly improved spectral broadening for both the picosecond and femtosecond optical pulses compared to the uncoated waveguide, achieving a broadening factor of up to ~3.4 for a device with 2 layers of GO. Based on the experimental results which show good agreement with theory, we obtain an improvement in the waveguide nonlinear parameter by a factor of up to 18.4 and a Kerr coefficient (n2) of GO that is about 5 orders of magnitude higher than Si3N4. These results reveal the effectiveness of 2D GO films to improve the nonlinear performance of Si3N4 waveguides.
The power-sensitive photo-thermal tuning (PTT) of two-dimensional (2D) graphene oxide (GO) integrated on the top surface of silicon nitride (SiN) waveguides is experimentally investigated. For SiN waveguide coating with monolayer GO, the light power thresholds for reversible and permanent GO reduction are measured. There are three reduction stages identified based on the presence of reversible versus permanent reduction. We also compared the PTT induced by a continuous-wave laser and a pulsed laser with the same average power, confirming that the PTT is primarily determined by the average input power.
We report enhanced nonlinear optics in nanowires, waveguides, and ring resonators by introducing layered two-dimensional (2D) graphene oxide (GO) films through experimental demonstration. The GO films are integrated on silicon-on-insulator nanowires (SOI), high index doped silica glass, and silicon nitride (SiN) waveguides and microring resonators (MRRs), to demonstrate an improved optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). By using a large-area, transfer-free, layer-by-layer GO coating method with photolithography and lift-off processes, we integrate GO films on these complementary metal-oxide-semiconductor (CMOS)-compatible devices. For SOI nanowires, significant spectral broadening of optical pulses in GO-coated SOI nanowires induced by self-phase modulation (SPM) is observed, achieving a high spectral broadening factor of 4.34 for a device with a patterned film including 10 layers of GO. A significant enhancement in the nonlinear figure of merit (FOM) for silicon nanowires by a factor of 20 is also achieved, resulting in a FOM > 5. For Hydex and SiN waveguides, enhanced FWM in the GO-coated waveguides is achieved, where conversion efficiency (CE) enhancements of up to 6.9 dB and 9.1 dB relative to the uncoated waveguides. For MRRs, an increase of up to ~10.3 dB in the FWM CE is achieved due to the resonant enhancement effect. These results reveal the strong potential of GO films to improve the nonlinear optics of nanowires, waveguides, and ring resonators.
We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.
As a new group of advanced 2D layered materials, bismuth oxyhalides, i.e., BiOX (X = Cl, Br, I), have recently become of great interest. In this work, we characterize the third-order optical nonlinearities of BiOBr, an important member of the BiOX family. The nonlinear absorption and Kerr nonlinearity of BiOBr nanoflakes at both 800 nm and 1550 nm are characterized via the Z-Scan technique. Experimental results show that BiOBr nanoflakes exhibit a large nonlinear absorption coefficient β ~ 10-7 m/W as well as a large Kerr coefficient n2 ~ 10-14 m2/W. We also note that the n2 of BiOBr reverses sign from negative to positive as the wavelength is changed from 800 nm to 1550 nm. We further characterize the thickness-dependent nonlinear optical properties of BiOBr nanoflakes, finding that the magnitudes of β and n2 increase with decreasing thickness of the BiOBr nanoflakes. Finally, we integrate BiOBr nanoflakes into silicon integrated waveguides and measure their insertion loss, with the extracted waveguide propagation loss showing good agreement with mode simulations based on ellipsometry measurements. These results confirm the strong potential of BiOBr as a promising nonlinear optical material for high-performance hybrid integrated photonic devices.
Polarization selective devices, such as polarizers and polarization selective resonant cavities (e.g., gratings and ring resonators), are core components for polarization control in optical systems and find wide applications in polarizationdivision- multiplexing, coherent optical detection, photography, liquid crystal display, and optical sensing. In this paper, we demonstrate integrated waveguide polarizers and polarization-selective micro-ring resonators (MRRs) incorporated with graphene oxide (GO). We achieve highly precise control of the placement, thickness, and length of the GO films coated on integrated photonic devices by using a solution-based, transfer-free, and layer-by-layer GO coating method followed by photolithography and lift-off processes. The latter overcomes the layer transfer fabrication limitations of 2D materials and represent a significant advance towards manufacturing integrated photonic devices incorporated with 2D materials. We measure the performance of the waveguide polarizer for different GO film thicknesses and lengths versus polarization, wavelength, and power, achieving a very high polarization dependent loss (PDL) of ~ 53.8 dB. For GOcoated integrated MRRs, we achieve an 8.3-dB polarization extinction ratio between the TE and TM resonances, with the extracted propagation loss showing good agreement with the waveguide results. Furthermore, we present layer-by-layer characterization of the linear optical properties of 2D layered GO films, including detailed measurements that conclusively determine the material loss anisotropy of the GO films as well as the relative contribution of film loss anisotropy versus polarization-dependent mode overlap, to the device performance. These results offer interesting physical insights and trends of the layered GO films from monolayer to quasi bulk like behavior and confirm the high-performance of integrated polarization selective devices incorporated with GO films.
Advanced photonic filters implemented by cascaded Sagnac loop reflectors (CSLRs) in silicon-on-insulator (SOI) nanowires are experimentally demonstrated. Based on mode splitting in these standing-wave (SW) resonators, we achieved diverse filtering shapes for spectral engineering showing good agreement with theory.
We experimentally demonstrate enhanced optical Kerr nonlinearity of hybrid integrated waveguides coated with layered graphene oxide (GO) films. Owing to the high Kerr nonlinearity of GO and strong mode overlap between GO and waveguide, up to ~9.5-dB enhancement of four wave mixing (FWM) conversion efficiency is achieved.
We experimentally demonstrate integrated waveguide polarizers and polarization-selective micro-ring resonators (MRRs) incorporated with layered graphene oxide (GO) films. We achieve a high polarization dependent loss (PDL) of ~53.8 dB for the GO-coated waveguide and a high polarization extinction ratio of ~8.3 dB for the GO-coated MRR.
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