Miniaturized spectrometers, owing to their compact dimensions, high sensitivity, and low cost, have been extensively applied in environmental monitoring, biomedical diagnostics, industrial inspection, and other fields. However, conventional miniature spectrometers often face challenges in simultaneously achieving high spectral resolution, miniaturization, and a high degree of integration. As a pivotal component in integrated optics, the Arrayed Waveguide Grating (AWG) possesses advantages such as exceptional resolution, broad spectral bandwidth, and superior integrability, thus serving as a highly effective means for the design and realization of miniature spectrometers. Here, a highly uniform visible light arrayed waveguide grating with a central wavelength of 633nm was designed and fabricated. The device was based on a 300 nm silicon nitride platform, with the waveguide width of 300nm. The beam diverges at the input star coupler, then propagates through the arrayed waveguide, and finally converges on the image plane of the output star coupler. There are 4 output channels with a channel spacing of 10nm, and the spectral resolution is 5nm. This configuration can provide a uniform spectral output with a high stability, making it suitable for applications in the field of spectral analysis.
As a typical representative of new hybrid photodetector, electron bombardment active pixel sensors (EBAPS) not only have the advantages of high sensitivity, fast response and wide spectrum of vacuum devices, but also have the advantages of high spatial resolution, low power consumption, low cost, mature technology and digital output of solid-state devices which have become the mainstream research direction of digital night vision devices at present. EBAPS devices based on third-generation cathode material gallium arsenide (GaAs) exhibit higher cathode sensitivity and quantum efficiency in the near-infrared band. They have addressed cathode fatigue issues through automatic gating high-voltage power supply technology, effectively improving cathode resolution and dynamic range. This paper introduces the research status of digital low light level (LLL) devices, focuses on the research progress of EBAPS devices based on GaAs cathode, and puts forward the prospect of digital low light level devices for night vision in the future.
Chip-scale LiDAR is the critical component of unmanned platform. We present a single channel FMCW LiDAR integrated module including InP FMCW laser, silicon optical phased array and InP-based balanced photodetector, which achieving the function of multi-target ranging. The integrated chip size is 1.65cm×1.65cm. Coupling efficiency between on-chip laser and silicon waveguide is 62.8%. Common mode rejection ratio of balanced detector is 53.08dB. Ranging accuracy of integrated FMCW LiDAR is 8.82cm.
Broadband photodetectors are becoming attractive in all weather and all time detection. However, silicon, germanium or compound semiconductors could not cover the visible and infrared wavebands which are commonly used in optoelectronic application. Here, we demonstrate a broadband photodetector based on graphene and silicon nanocrystals which are all CMOS-compatible. We achieved a photodetector which photoelectric response range covering visible and infrared (400-1600nm) and peak response up to 630mA/W. Furthermore, the photoelectric response time lower than 50μs.
Ultro-thin benzocyclobutene(BCB)bonding process has been proposed as a solution of InGaAs/Si optoelectronic heterogeneous integration. Here, we present a process of InGaAs PIN photodetector bonding onto silicon photonic chip, an ultra-thin bonding layer below 400nm is applied. Silicon photonic chip was fabricated by CMOS compatible process. In order to importing and exporting the light, a focal grating coupler was designed and fabricated, and fiber-to-chip efficiency was 37.7%. InGaAs PIN photodetector responsivity was 0.95A/W which taped out on 3 inch standard InP process. The result presented that the responsivity deterioration coefficient was below 1dB, and the coupling efficiency from Si waveguide to InGaAs photodetector was 41.8%.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.