As a typical representative of new hybrid photodetector, electron bombardment active pixel sensors (EBAPS) not only have the advantages of high sensitivity, fast response and wide spectrum of vacuum devices, but also have the advantages of high spatial resolution, low power consumption, low cost, mature technology and digital output of solid-state devices which have become the mainstream research direction of digital night vision devices at present. EBAPS devices based on third-generation cathode material gallium arsenide (GaAs) exhibit higher cathode sensitivity and quantum efficiency in the near-infrared band. They have addressed cathode fatigue issues through automatic gating high-voltage power supply technology, effectively improving cathode resolution and dynamic range. This paper introduces the research status of digital low light level (LLL) devices, focuses on the research progress of EBAPS devices based on GaAs cathode, and puts forward the prospect of digital low light level devices for night vision in the future.
Chip-scale LiDAR is the critical component of unmanned platform. We present a single channel FMCW LiDAR integrated module including InP FMCW laser, silicon optical phased array and InP-based balanced photodetector, which achieving the function of multi-target ranging. The integrated chip size is 1.65cm×1.65cm. Coupling efficiency between on-chip laser and silicon waveguide is 62.8%. Common mode rejection ratio of balanced detector is 53.08dB. Ranging accuracy of integrated FMCW LiDAR is 8.82cm.
Broadband photodetectors are becoming attractive in all weather and all time detection. However, silicon, germanium or compound semiconductors could not cover the visible and infrared wavebands which are commonly used in optoelectronic application. Here, we demonstrate a broadband photodetector based on graphene and silicon nanocrystals which are all CMOS-compatible. We achieved a photodetector which photoelectric response range covering visible and infrared (400-1600nm) and peak response up to 630mA/W. Furthermore, the photoelectric response time lower than 50μs.
Ultro-thin benzocyclobutene(BCB)bonding process has been proposed as a solution of InGaAs/Si optoelectronic heterogeneous integration. Here, we present a process of InGaAs PIN photodetector bonding onto silicon photonic chip, an ultra-thin bonding layer below 400nm is applied. Silicon photonic chip was fabricated by CMOS compatible process. In order to importing and exporting the light, a focal grating coupler was designed and fabricated, and fiber-to-chip efficiency was 37.7%. InGaAs PIN photodetector responsivity was 0.95A/W which taped out on 3 inch standard InP process. The result presented that the responsivity deterioration coefficient was below 1dB, and the coupling efficiency from Si waveguide to InGaAs photodetector was 41.8%.
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