Mr. XiongJun Li Profile

XiongJun Li

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Proceedings Article | 4 April 2023 Paper

Design of non-equilibrium photovoltaic High-Operating-Temperature (HOT) mid-wavelength infrared HgCdTe detector

Jianyun Yu, Jincheng Kong, Gang Qin, Qiang Qin, Wenbin Qi, Linwei Song, XiongJun Li, Dafan Zuo, Yanhui Li, Jun Zhao, Peng Zhao

Proceedings Volume 12617, 126174V (2023) https://doi.org/10.1117/12.2666394

KEYWORDS: Mercury cadmium telluride, Cadmium, Heterojunctions, Sensors, Annealing, Ions, Absorption, Infrared detectors, Photovoltaics, Infrared sensors

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Non-equilibrium photovoltaic HgCdTe detector with a P⁺ νN⁺ structure has been demonstrated to work at high temperature, in which carriers were swept out in a non-equilibrium condition, resulting in a significant decrease of carrier concentration. The P⁺ -type layer grown by Molecular Beam Epitaxy (MBE) is achieved by arsenic (As) doping, followed by high temperature annealing to activate As. However, due to the annealing temperature is higher than 400 °C, interdiffusion of cations (cadmium (Cd) ion and mercury (Hg) ion) can easily take place in such a high temperature, leading to a higher Cd component and shorter absorption region in the absorber layer, which can ultimately decrease the optical absorption and quantum efficiency of the device. Herein, we proposed a P⁺G₄G₃νG₂G₁N⁺ heterostructure, which can effectively trap the Cd ions diffusing from the P⁺ and N⁺ regions due to the component low-lying area between G₄G₃ and G₂G₁. In this work, we firstly investigated the performance using Silvaco, the simulation results indicated that this P⁺G₄G₃νG₂G₁N⁺ heterostructure can effectively achieve Auger suppression at 200K. High quality and uniform HgCdTe epilayers on CdZnTe substrate were fabricated. The effective thickness of the absorption layer after annealing reduced by more than 1.5 μm due to interdiffusion of the Cd ions in a conventional P⁺ νN⁺ structure. In sharp contrast, the effective thickness of the absorption layer after annealing reduced within 0.5 μm in the as-designed P⁺G₄G₃νG₂G₁N⁺, indicating an inspired way to fabricate high performance HOT non-equilibrium HgCdTe detector.

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