Single photon emitters in 2D and nanoscale materials provide an increasingly promising framework for scalable quantum networking and photonic quantum simulation, but control of the emitter photophysics remains an obstacle to the realization of useful photonic quantum technologies. Here, we use correlative cathodoluminescence, photoluminescence, and atomic force microscopies to probe the effect of nanoscale strain gradients on strain-localized excitons in GaSe. With this understanding in hand, we describe the potential for in situ electron-beam manipulation and optical characterization of emitter photophysics.
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