Photo-reflectance (PR) provides an optical means for rapid and precise measurement of near-surface
electric fields in semiconductor materials. This paper details the use of photo-reflectance to
characterize dopant activation in ultra-shallow junction (USJ) structures formed using millisecond
anneal processes. USJ structures were formed in silicon using 500eV boron implantation with a dose of
1015/cm2, followed by flash anneals at 1250-1350°C. Reference metrology was performed using
secondary ion mass spectroscopy (SIMS) and various sheet resistance (Rs) methods. Methods to
calibrate photo-reflectance signals to active carrier concentration in USJ structures, including halo-doped
samples, are described. Photo-reflectance is shown to be highly sensitive to active dopant
concentration in USJ structures formed by millisecond annealing. Additionally, PR provides fast "on-product"
measurement capability.
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